Design of high stability, low power and high speed 12 T SRAM cell in 32-nm CNTFET technology
| Autor: | Mani, Elangovan, Abbasian, Erfan, Gunasegeran, Muthukumaran, Sofimowloodi, Sobhan |
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| Zdroj: | In AEUE - International Journal of Electronics and Communications September 2022 154 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect