2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET
Autor: | Baral, Kamalaksha, Singh, Prince Kumar, Kumar, Sanjay, Singh, Ashish, Tripathy, Manas, Chander, Sweta, Jit, Satyabrata |
---|---|
Zdroj: | In AEUE - International Journal of Electronics and Communications March 2020 116 |
Databáze: | ScienceDirect |
Externí odkaz: |