2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET

Autor: Baral, Kamalaksha, Singh, Prince Kumar, Kumar, Sanjay, Singh, Ashish, Tripathy, Manas, Chander, Sweta, Jit, Satyabrata
Zdroj: In AEUE - International Journal of Electronics and Communications March 2020 116
Databáze: ScienceDirect