A new 2 D mathematical modeling of surrounding gate triple material tunnel FET using halo engineering for enhanced drain current
| Autor: | Vanitha, P. a, Arun Samuel, T.S. b, Nirmal, D. c, ⁎ |
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| Zdroj: | In AEUE - International Journal of Electronics and Communications February 2019 99:34-39 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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