The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
| Autor: | Jiang, Guangyuan, Lv, Yuanjie, Lin, Zhaojun, Yang, Yongxiong, Liu, Yang |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures March 2021 127 |
| Databáze: | ScienceDirect |
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