Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask
| Autor: | Lee, Ming-Lun, Chen, Ching-Hua, Sheu, Jinn-Kong |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures October 2020 124 |
| Databáze: | ScienceDirect |
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