Optical and electrical properties of nanostructured implanted silicon n+-p junction passivated by atomic layer deposited Al2O3
| Autor: | Xu, Tao, Tian, Zhenghao, Elmi, Omar Ibrahim, Krzeminski, Christophe, Robbe, Odile, Lambert, Yannick, Yakeda, Dimitri, Okada, Etienne, Wei, Bin, Stiévenard, Didier |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures September 2017 93:190-195 |
| Databáze: | ScienceDirect |
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