Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III–V heterostructure underlap DG MOSFET
| Autor: | Pardeshi, Hemant, Kumar Pati, Sudhansu, Raj, Godwin, Mohankumar, N, Kumar Sarkar, Chandan |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures September 2012 46:61-67 |
| Databáze: | ScienceDirect |
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