Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(1 1 1)A
| Autor: | Fukushima, T., Hijikata, Y., Yaguchi, H., Yoshida, S., Okano, M., Yoshita, M., Akiyama, H., Kuboya, S., Katayama, R., Onabe, K. |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2010 42(10):2529-2531 |
| Databáze: | ScienceDirect |
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