Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions
Autor: | Eckhardt, C., Brezna, W., Silvano, J., Bethge, O., Bertagnolli, E., Smoliner, J. |
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Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2010 42(4):1196-1199 |
Databáze: | ScienceDirect |
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