Geometry effects and frequency dependence in scanning capacitance microscopy on GaAs Schottky and metal–oxide–semiconductor-Type junctions

Autor: Eckhardt, C., Brezna, W., Silvano, J., Bethge, O., Bertagnolli, E., Smoliner, J.
Zdroj: In Physica E: Low-dimensional Systems and Nanostructures 2010 42(4):1196-1199
Databáze: ScienceDirect