Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

Autor: Umeno, K., Furukawa, Y., Urakami, N., Noma, R., Mitsuyoshi, S., Wakahara, A., Yonezu, H.
Zdroj: In Physica E: Low-dimensional Systems and Nanostructures 2010 42(10):2772-2776
Databáze: ScienceDirect