Twin photoluminescence peaks from single isoelectronic traps in nitrogen δ-doped GaAs
| Autor: | Endo, Y., Hijikata, Y., Yaguchi, H., Yoshida, S., Yoshita, M., Akiyama, H., Nakajima, F., Katayama, R., Onabe, K. |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2008 40(6):2110-2112 |
| Databáze: | ScienceDirect |
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