Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes
| Autor: | Hattab, A., Dufaye, F., Meyer, F. *, Yam, Vy, Le Thanh, Vinh, Bouchier, D., Meyer, R., Schneegans, O., Clerc, C. |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2003 17:648-650 |
| Databáze: | ScienceDirect |
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