Fabrication of height-controlled InAs quantum dots on GaAs surfaces by in situ AsBr 3 etching and molecular beam epitaxy
| Autor: | Yang, T *, Kohmoto, S, Nakamura, H, Asakawa, K |
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| Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2002 13(2):1151-1154 |
| Databáze: | ScienceDirect |
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