Investigation of self-aligned p ++-GaAs/n-InGaP heterojunction field-effect transistors

Autor: Lour, W.-S. *, Tsai, M.-K., Chen, K.-C., Tan, S.-W., Wu, Y.-W., Yang, Y.-J.
Zdroj: In Physica E: Low-dimensional Systems and Nanostructures 2002 13(2):934-937
Databáze: ScienceDirect