Investigation of self-aligned p ++-GaAs/n-InGaP heterojunction field-effect transistors
Autor: | Lour, W.-S. *, Tsai, M.-K., Chen, K.-C., Tan, S.-W., Wu, Y.-W., Yang, Y.-J. |
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Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2002 13(2):934-937 |
Databáze: | ScienceDirect |
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