Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures
Autor: | Sadowski, J. *, Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Ilver, L., Åsklund, H., Świątek, K., Domagała, J.Z., Bąk-Misiuk, J., Maude, D. |
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Zdroj: | In Physica E: Low-dimensional Systems and Nanostructures 2001 10(1):181-185 |
Databáze: | ScienceDirect |
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