Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures

Autor: Sadowski, J. *, Mathieu, R., Svedlindh, P., Karlsteen, M., Kanski, J., Ilver, L., Åsklund, H., Świątek, K., Domagała, J.Z., Bąk-Misiuk, J., Maude, D.
Zdroj: In Physica E: Low-dimensional Systems and Nanostructures 2001 10(1):181-185
Databáze: ScienceDirect