Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation
| Autor: | Kostopoulos, Athanasios, Adikimenakis, Adam, Tsagaraki, Katerina, Kayambaki, Maria, Kornilios, Nikolaos, Konstantinidis, George, Georgakilas, Alexandros |
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| Zdroj: | In Materials Science in Semiconductor Processing 15 March 2025 188 |
| Databáze: | ScienceDirect |
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