Homoepitaxial growth of device-grade GaAs using low-pressure remote plasma CVD
| Autor: | Watrin, Lise, Silva, François, Largeau, Ludovic, Findling, Nathaniel, Al Katrib, Mirella, Bouttemy, Muriel, Dembélé, Kassiogé, Vaissière, Nicolas, Jadaud, Cyril, Bulkin, Pavel, Vanel, Jean-Charles, Johnson, Erik V., Ouaras, Karim, Cabarrocas, Pere Roca i |
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| Zdroj: | In Materials Science in Semiconductor Processing February 2025 186 |
| Databáze: | ScienceDirect |
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