Enhanced resistance property between ALD-Ru and W by controlling oxygen behavior with post Ru deposition annealing
Autor: | Kim, Sung Jun, Kim, Seon Yong, Park, Jun Hyeong, Park, In-Sung, Park, Young Wook, Ahn, Jinho |
---|---|
Zdroj: | In Materials Science in Semiconductor Processing January 2025 185 |
Databáze: | ScienceDirect |
Externí odkaz: |