Enhanced resistance property between ALD-Ru and W by controlling oxygen behavior with post Ru deposition annealing

Autor: Kim, Sung Jun, Kim, Seon Yong, Park, Jun Hyeong, Park, In-Sung, Park, Young Wook, Ahn, Jinho
Zdroj: In Materials Science in Semiconductor Processing January 2025 185
Databáze: ScienceDirect