Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies

Autor: Wu, Huan, Luo, Houcai, Zhang, Jingping, Zheng, Bofeng, Wang, Ruonan, Chen, Xianping
Zdroj: In Materials Science in Semiconductor Processing December 2024 184
Databáze: ScienceDirect