Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization

Autor:	Patout, L., Alfonso, C., Descoins, M., Fournel, F., Mangelinck, D., Mangelinck-Noël, N.
Zdroj:	In Materials Science in Semiconductor Processing December 2024 184
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect