Dissociation of [formula omitted] misfit dislocation at the interface of α-Ga2O3 thin film deposited on m-plane sapphire
| Autor: | Myasoedov, A.V., Pavlov, I.S., Morozov, A.V., Pechnikov, A.I., Stepanov, S.I., Nikolaev, V.I. |
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| Zdroj: | In Materials Science in Semiconductor Processing December 2024 184 |
| Databáze: | ScienceDirect |
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