Heterojunction channel engineering for enhanced mobility and stability of solution-processed holmium-doped indium oxide thin film transistors

Autor: Deng, Zeneng, Liang, Zhihao, Yang, Yuexin, Ye, Qiannan, Ning, Honglong, Liu, Xianzhe, Li, Zhenchao, Luo, Dongxiang, Yao, Rihui, Peng, Junbiao
Zdroj: In Materials Science in Semiconductor Processing December 2024 184
Databáze: ScienceDirect