Heterojunction channel engineering for enhanced mobility and stability of solution-processed holmium-doped indium oxide thin film transistors
Autor: | Deng, Zeneng, Liang, Zhihao, Yang, Yuexin, Ye, Qiannan, Ning, Honglong, Liu, Xianzhe, Li, Zhenchao, Luo, Dongxiang, Yao, Rihui, Peng, Junbiao |
---|---|
Zdroj: | In Materials Science in Semiconductor Processing December 2024 184 |
Databáze: | ScienceDirect |
Externí odkaz: |