Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111)

Autor: Chatterjee, Soumyadip, Sarkar, Ritam, Bhunia, Swagata, Gayakwad, Dhammapriy, Saha, Dipankar, Laha, Apurba
Zdroj: In Materials Science in Semiconductor Processing September 2024 180
Databáze: ScienceDirect