Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films
Autor: | Maeda, Tatsuro, Ishii, Hiroyuki, Chang, Wen Hsin, Zhang, Shiyu, Shibayama, Shigehisa, Kurosawa, Masashi, Nakatsuka, Osamu |
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Zdroj: | In Materials Science in Semiconductor Processing 15 June 2024 176 |
Databáze: | ScienceDirect |
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