Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films

Autor: Maeda, Tatsuro, Ishii, Hiroyuki, Chang, Wen Hsin, Zhang, Shiyu, Shibayama, Shigehisa, Kurosawa, Masashi, Nakatsuka, Osamu
Zdroj: In Materials Science in Semiconductor Processing 15 June 2024 176
Databáze: ScienceDirect