Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
Autor: | Galizia, Bruno, Fiorenza, Patrick, Schilirò, Emanuela, Pecz, Bela, Foragassy, Zsolt, Greco, Giuseppe, Saggio, Mario, Cascino, Salvatore, Lo Nigro, Raffaella, Roccaforte, Fabrizio |
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Zdroj: | In Materials Science in Semiconductor Processing May 2024 174 |
Databáze: | ScienceDirect |
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