Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Autor: Galizia, Bruno, Fiorenza, Patrick, Schilirò, Emanuela, Pecz, Bela, Foragassy, Zsolt, Greco, Giuseppe, Saggio, Mario, Cascino, Salvatore, Lo Nigro, Raffaella, Roccaforte, Fabrizio
Zdroj: In Materials Science in Semiconductor Processing May 2024 174
Databáze: ScienceDirect