Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys

Autor: Yamada, Michihiro, Suzuki, Shota, Osaka, Ai I., Sumi, Kazuaki, Inoue, Takahiro, Hattori, Azusa N., Yamada, Shinya, Sawano, Kentarou, Dhamrin, Marwan, Hamaya, Kohei
Zdroj: In Materials Science in Semiconductor Processing May 2024 174
Databáze: ScienceDirect