Influence of carbon on Ni gettering in C2Hx+ and SiHy+ mixture molecular-ion-implanted silicon epitaxial wafer

Autor: Hirose, Ryo, Onaka-Masada, Ayumi, Okuyama, Ryosuke, Kadono, Takeshi, Kobayashi, Koji, Suzuki, Akihiro, Koga, Yoshihiro, Kurita, Kazunari
Zdroj: In Materials Science in Semiconductor Processing May 2024 174
Databáze: ScienceDirect