Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
| Autor: | Jung, Hyun-Wook, Choi, Il-Gyu, Kim, Do-Hyun, Jung, Hyeon-Seok, Choi, Su-Min, Chang, Sung-Jae, Ahn, Ho-Kyun, Lim, Jong-Won, Kang, Dong-Min, Kim, Dae-Hyun, Won, Sang Min |
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| Zdroj: | In Materials Science in Semiconductor Processing February 2024 170 |
| Databáze: | ScienceDirect |
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