Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons
Autor: | Jemmali, W.Q., Habchi, M.M., Rebey, A. |
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Zdroj: | In Materials Science in Semiconductor Processing January 2024 169 |
Databáze: | ScienceDirect |
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