Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature
| Autor: | Gelczuk, Łukasz, Kopaczek, Jan, Pucicki, Damian, Rockett, Thomas B.O., Richards, Robert D., Kudrawiec, Robert |
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| Zdroj: | In Materials Science in Semiconductor Processing January 2024 169 |
| Databáze: | ScienceDirect |
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