A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

Autor: Maldonado, D., Vinuesa, G., Aldana, S., Aguirre, F.L., Cantudo, A., García, H., González, M.B., Jiménez-Molinos, F., Campabadal, F., Miranda, E., Dueñas, S., Castán, H., Roldán, J.B.
Zdroj: In Materials Science in Semiconductor Processing January 2024 169
Databáze: ScienceDirect
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