Tuning electronic properties of Z-scheme InSe/HfS2 heterostructure by external electric field and biaxial strain

Autor: Luan, Lijun, Han, Liuyang, Zhang, Di, Bai, Kaiyang, Sun, Kaili, Xu, Changyan, Li, Long, Duan, Li
Zdroj: In Materials Science in Semiconductor Processing 1 November 2023 166
Databáze: ScienceDirect