Impact of metallic and vacancy-oriented filamentary switching on memristor device based on Cs2AgInCl6 double halide perovskite

Autor: Khalid, Awais, Alanazi, Abdulaziz M., Alderhami, Suliman A., Alsehli, Amal H., Alsowayigh, Marwah M., Saeedi, Ahmad M., Albargi, Hasan B., Al-Saidi, Hamed M.
Zdroj: In Materials Science in Semiconductor Processing October 2023 165
Databáze: ScienceDirect