Characterization of dislocation etch pits by molten KOH etching in n- and p-type 4H–SiC epilayers doped by ion implantation
| Autor: | Gao, Jiaxu, Ju, Tao, Zhang, Liguo, Kan, Xiang, Ji, Rongkun, Tang, Wenbo, Fang, Dan, Wei, Zhipeng, Zhang, Xuan, Zhang, Baoshun, Zeng, Zhongming |
|---|---|
| Zdroj: | In Materials Science in Semiconductor Processing October 2023 165 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect