Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content

Autor: Frauenrath, M., Acosta Alba, P., Concepción, O., Bae, J.-H., Gauthier, N., Nolot, E., Veillerot, M., Bernier, N., Buca, D., Hartmann, J.-M.
Zdroj: In Materials Science in Semiconductor Processing 15 August 2023 163
Databáze: ScienceDirect