Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content
Autor: | Frauenrath, M., Acosta Alba, P., Concepción, O., Bae, J.-H., Gauthier, N., Nolot, E., Veillerot, M., Bernier, N., Buca, D., Hartmann, J.-M. |
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Zdroj: | In Materials Science in Semiconductor Processing 15 August 2023 163 |
Databáze: | ScienceDirect |
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