Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

Autor: Yang, Tzu-Hung, Lin, Zhe-Zhang, Tsai, Shang-Che, Dai, Jia-Zhi, Chen, Shih-Ming, Lin, Ming-Wei, Chen, Szu-yuan
Zdroj: In Materials Science in Semiconductor Processing 1 August 2023 162
Databáze: ScienceDirect