Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate
| Autor: | Md Sahar, Mohd Ann Amirul Zulffiqal, Hassan, Zainuriah, Ng, Sha Shiong, Hamzah, Nur Atiqah |
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| Zdroj: | In Materials Science in Semiconductor Processing 15 March 2023 156 |
| Databáze: | ScienceDirect |
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