Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate

Autor: Odesanya, Kazeem Olabisi, Ahmad, Roslina, Andriyana, Andri, Bingol, Sedat, Çetinkaya, Ridvan, Wong, Yew Hoong
Zdroj: In Materials Science in Semiconductor Processing December 2022 152
Databáze: ScienceDirect