Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts
Autor: | Zeng, Yuheng, Ma, Dian, Liu, Zunke, Liao, Mingdun, Xiao, Mingjing, Xing, Haiyang, Lin, Na, Ding, Zetao, Cheng, Hao, Wang, Yude, Liu, Wei, Yan, Baojie, Ye, Jichun |
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Zdroj: | In Materials Science in Semiconductor Processing 1 November 2022 150 |
Databáze: | ScienceDirect |
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