Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

Autor: Zeng, Yuheng, Ma, Dian, Liu, Zunke, Liao, Mingdun, Xiao, Mingjing, Xing, Haiyang, Lin, Na, Ding, Zetao, Cheng, Hao, Wang, Yude, Liu, Wei, Yan, Baojie, Ye, Jichun
Zdroj: In Materials Science in Semiconductor Processing 1 November 2022 150
Databáze: ScienceDirect