Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon
| Autor: | Lespiaux, J. a, ∗, Deprat, F. a, Rodrigues Goncalves, B. a, Souc, J. a, Leverd, F. a, Juhel, M. a, Mattei, J.-G. a, Giroud-Garampon, C. b, Roman, A. b, Magis, T. b, Hartmann, J.M. b |
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| Zdroj: | In Materials Science in Semiconductor Processing 15 June 2022 144 |
| Databáze: | ScienceDirect |
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