Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopy

Autor: Jóźwik, Iwona, Jagielski, Jacek, Caban, Piotr, Kamiński, Maciej, Kentsch, Ulrich
Zdroj: In Materials Science in Semiconductor Processing February 2022 138
Databáze: ScienceDirect