GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)
| Autor: | Biswas, Debaleen, Tsuboi, Takuya, Egawa, Takashi |
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| Zdroj: | In Materials Science in Semiconductor Processing 15 November 2021 135 |
| Databáze: | ScienceDirect |
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