Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena

Autor: Najjar, M., Dridi Rezgui, B., Bouaicha, M., Palais, O., Bessais, B., Aouida, S.
Zdroj: In Materials Science in Semiconductor Processing 15 November 2021 135
Databáze: ScienceDirect