Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer
| Autor: | Miyoshi, Makoto, Inoue, Akiyoshi, Yamanaka, Mizuki, Harada, Hiroki, Egawa, Takashi |
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| Zdroj: | In Materials Science in Semiconductor Processing October 2021 133 |
| Databáze: | ScienceDirect |
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