The growth of solution-gelation TiO2 and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor

Autor: Lai, Cheng-Hung, Lee, Tsung-Ying, Huang, Jung-Sheng, Lee, Kuan-Wei, Wang, Yeong-Her
Zdroj: In Materials Science in Semiconductor Processing July 2021 129
Databáze: ScienceDirect