Crystallinity and morphology of InSb epitaxial layers grown on GaSb by MOVPE using TDMASb and TMSb as Sb precursors
Autor: | Ahia, Chinedu Christian, Tile, Ngcali, Meyer, Edson L., Botha, Johannes Reinhardt |
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Zdroj: | In Materials Science in Semiconductor Processing 1 June 2021 127 |
Databáze: | ScienceDirect |
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