Crystallinity and morphology of InSb epitaxial layers grown on GaSb by MOVPE using TDMASb and TMSb as Sb precursors

Autor: Ahia, Chinedu Christian, Tile, Ngcali, Meyer, Edson L., Botha, Johannes Reinhardt
Zdroj: In Materials Science in Semiconductor Processing 1 June 2021 127
Databáze: ScienceDirect