The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures
| Autor: | Pągowska, Karolina a, ∗, Kozubal, Maciej a, ∗∗, Taube, Andrzej a, Kruszka, Renata a, Kamiński, Maciej a, b, Kwietniewski, Norbert b, Juchniewicz, Marcin c, Szerling, Anna a |
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| Zdroj: | In Materials Science in Semiconductor Processing 1 June 2021 127 |
| Databáze: | ScienceDirect |
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