Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates

Autor: Zhang, Tao, Li, Yifan, Feng, Qian, Zhang, Yachao, Ning, Jing, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue
Zdroj: In Materials Science in Semiconductor Processing 1 March 2021 123
Databáze: ScienceDirect