Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations
| Autor: | Gadani, Keval, Rathod, K.N., Dhruv, Davit, Shrimali, V.G., Rajyaguru, Bhargav, Joseph, Joyce, Joshi, A.D., Pandya, D.D., Asokan, K., Solanki, P.S., Shah, N.A. |
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| Zdroj: | In Materials Science in Semiconductor Processing January 2021 121 |
| Databáze: | ScienceDirect |
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