X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)
| Autor: | Meyer, Kevin, Buchholz, Martin, Uxa, Daniel, Dörrer, Lars, Schmidt, Harald, Schaadt, Daniel M. |
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| Zdroj: | In Materials Science in Semiconductor Processing 15 November 2020 119 |
| Databáze: | ScienceDirect |
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